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Emily Warren
California Institute of Technology
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- is following 1 new article in LEAF: LEAF - already discussedEffects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts. Gstrein Florian (2002) J. Phys. Chem. B.November 2, 2009Login or register to post comments
- created an event in LEAFLogin or register to post commentsMonday, November 2, 2009 - 12:00pm at Orange Room
So far this is what I'm thinking, but basically because it is a paper I have been meaning to read. If you have any pressing issue you would like to discuss, please let me know!
Effects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts. Gstrein Florian (2002) J. Phys. Chem. B. - created the Nanowire PV Club journal club.October 17, 2009
- is following 3 new articles in LEAF: LEAF - already discussedPassivation of recombination centers in n-WSe2 yields high efficiency (>14%) photoelectrochemical cell. Tenne R. (1985) Appl. Phys. Lett..Semiconductor Electrodes. Fan Fu-Ren F. (1980) J. Electrochem. Soc..Electrochemical characterization of p-type semiconducting tungsten disulfide photocathodes: efficient photoreduction processes at semiconductor/liquid electrolyte interfaces. Baglio Joseph A. (1983) J. Am. Chem. Soc..October 8, 2009Login or register to post comments
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LEAF 10/5/09
Passivation of recombination centers in n-WSe2 yields high efficiency (>14%) photoelectrochemical cell. Tenne R. (1985) Appl. Phys. Lett.. - to LEAFLogin or register to post comments
LEAF 10/5/09
Semiconductor Electrodes. Fan Fu-Ren F. (1980) J. Electrochem. Soc.. - is following 6 new articles in LEAF: LEAF - already discussed630-mV open circuit voltage, 12% efficient n-Si liquid junction. Rosenbluth Mary L. (1984) Appl. Phys. Lett..The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devices. Bard Allen J. (1980) J. Am. Chem. Soc..Behavior of Si Photoelectrodes under High Level Injection Conditions. 1. Steady-State Current−Voltage Properties and Quasi-Fermi Level Positions under Illumination. Tan Ming X. (1997) J. Phys. Chem. B.Behavior of Si Photoelectrodes under High Level Injection Conditions. 2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels under Illumination and Applied Bias. Krüger Olaf (1997) J. Phys. Chem. B.Photoelectrochemical reduction of N,N'-dimethyl-4,4'-bipyridinium in aqueous media at p-type silicon: sustained photogeneration of a species capable of evolving hydrogen. Bookbinder Dana C. (1979) J. Am. Chem. Soc..A Quantitative Investigation of the Open-Circuit Photovoltage at the Semiconductor/Liquid Interface. Lewis Nathan S. (1984) J. Electrochem. Soc..September 21, 2009Login or register to post comments
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This is a classic Nate Lewis paper. The set-up: intrinsic Si with n+ and p+ back-contacts under HLI; these electrodes are then placed in contact with various redox solutions. The moral of the story: carrier collection is controlled by diffusion, not drift since high Vocs are achieved without significant band banding at the liquid interface. The next two papers in the series do more to confirm this interesting result.
Experimental Measurement of Quasi-Fermi Levels at an Illuminated Semiconductor/Liquid Contact. Tan Ming X. (1994) J. Phys. Chem.. - Login or register to post comments
TOSCA modeling of the same system
Behavior of Si Photoelectrodes under High Level Injection Conditions. 2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels under Illumination and Applied Bias. Krüger Olaf (1997) J. Phys. Chem. B. - created an event in LEAFMonday, August 31, 2009 - 12:00pm at 216 Noyes
more high level injection fun!
Experimental Measurement of Quasi-Fermi Levels at an Illuminated Semiconductor/Liquid Contact. Tan Ming X. (1994) J. Phys. Chem..Behavior of Si Photoelectrodes under High Level Injection Conditions. 1. Steady-State Current−Voltage Properties and Quasi-Fermi Level Positions under Illumination. Tan Ming X. (1997) J. Phys. Chem. B.Behavior of Si Photoelectrodes under High Level Injection Conditions. 2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels under Illumination and Applied Bias. Krüger Olaf (1997) J. Phys. Chem. B.Login or register to post commentsthe focus will be on the first of the 3Si-HLI papers. The 1994 Ming Tan paper is the first report of the selective ohmic backcontact experimental setup by the Lewis group - Emily Warren (Caltech) August 31, 2009 Comment deleted - is following 53 new articles in LEAF: 140b papersChemical passivation of carrier recombination at acid interfaces and grain boundaries of p-indium phosphide. Heller Adam (1983) J. Phys. Chem..Trends in the open circuit voltage of semiconductor/liquid interfaces: studies of n-aluminum gallium arsenide/acetonitrile-ferrocene+/0 and n-aluminum gallium arsenide/potassium hydroxide-selenide-/2- (aq) junctions. Casagrande Louis G. (1991) J. Phys. Chem..Absolute limiting efficiencies for photovoltaic energy conversion. ARAUJO G (1994) Solar Energy Materials and Solar Cells.630-mV open circuit voltage, 12% efficient n-Si liquid junction. Rosenbluth Mary L. (1984) Appl. Phys. Lett..Electron Transfer Reactions in Chemistry: Theory and Experiment (Nobel Lecture). Marcus Rudolph A. (1993) Angew. Chem. Int. Ed. Engl..Hydrogen-evolving semiconductor photocathodes: nature of the junction and function of the platinum group metal catalyst. Heller A. (1982) J. Am. Chem. Soc..Photoelectrolysis of water in cells with SrTiO3 anodes. Mavroides J. G. (1976) Appl. Phys. Lett..Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinning. Bocarsly Andrew B. (1980) J. Am. Chem. Soc..Visible light to electrical energy conversion. Stable cadmium sulfide and cadmium selenide photoelectrodes in aqueous electrolytes. Ellis Arthur B. (1976) J. Am. Chem. Soc..Efficient p-InP(Rh-H alloy) and p-InP(Re-H alloy) Hydrogen Evolving Photocathodes. Aharon-Shalom E. (1982) J. Electrochem. Soc..Enhanced photoelectrochemical solar-energy conversion by gallium arsenide surface modification. Parkinson B. A. (1978) Appl. Phys. Lett..Semiconducting oxide anodes in photoassisted electrolysis of water. Kung H. H. (1977) J. Appl. Phys..Semiconductor liquid junction solar cells based on anodic sulphide films. MILLER BARRY (1976) Nature.Progress in Understanding Electron-Transfer Reactions at Semiconductor/Liquid Interfaces. Lewis Nathan S. (1998) J. Phys. Chem. B.Photoelectrochemical energy conversion and storage using polycrystalline chalcogenide electrodes. HODES GARY (1976) Nature.n-type molybdenum-diselenide-based liquid-junction solar cells: A nonaqueous electrolyte system employing the chlorine/chloride couple. Schneemeyer Lynn F. (1980) Appl. Phys. Lett..Photoassisted Electrolysis of Water by Irradiation of a Titanium Dioxide Electrode. Wrighton M. S. (1975) Proceedings of the National Academy of Sciences.The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devices. Bard Allen J. (1980) J. Am. Chem. Soc..Photocurrent spectroscopy of semiconductor electrodes in liquid junction solar cells. Heller A. (1978) J. Am. Chem. Soc..Semiconductor Electrodes. Nagasubramanian G. (1983) J. Electrochem. Soc..Semiconductor electrodes. II. Electrochemistry at n-type titanium dioxide electrodes in acetonitrile solutions. Frank S. N. (1975) J. Am. Chem. Soc..Silicon photocathode behavior in acidic vanadium(II)-vanadium(III) solutions. Heller A. (1981) J. Am. Chem. Soc..11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cell. Heller Adam (1981) Appl. Phys. Lett..n-Type molybdenum diselenide-based photoelectrochemical cells: evidence for Fermi level pinning and comparison of the efficiency for conversion of light to electricity with various solvent/halogen/halide combinations. Schneemeyer Lynn F. (1980) J. Am. Chem. Soc..Experimental Measurement of Quasi-Fermi Levels at an Illuminated Semiconductor/Liquid Contact. Tan Ming X. (1994) J. Phys. Chem..Effects of Cations on the Performance of the Photoanode in the n-GaAs∣K[sub 2]Se-K[sub 2]Se[sub 2]-KOH∣C Semiconductor Liquid Junction Solar Cell. Parkinson B. A. (1979) J. Electrochem. Soc..Efficient Solar to Chemical Conversion: 12% Efficient Photoassisted Electrolysis in the [ p -type InP(Ru)]/HCl-KCl/Pt(Rh) Cell. Heller Adam (1981) Phys. Rev. Lett..Electrochemical Photolysis of Water at a Semiconductor Electrode. FUJISHIMA AKIRA (1972) Nature.A light-variation insensitive high efficiency solar cell. Licht Stuart (1987) Nature.Chemical modification of n-gallium arsenide photoanodes with group VIIIB metal ions: stability in contact with 1.0 M potassium hydroxide(aq)-0.10 M dipotassium selenide(aq) solutions and I-V properties in contact with 1.0 M potassium hydroxide(aq)-0.3 M d. Tan Ming X. (1991) J. Phys. Chem..Study of n-type gallium arsenide- and gallium phosphide-based photoelectrochemical cells. Stabilization by kinetic control and conversion of optical energy to electricity. Ellis Arthur B. (1977) J. Am. Chem. Soc..A double photoelectrode-based cell for the conversion of light to electricity: p-type cadmium telluride and n-type cadmium selenide photoelectrodes in a polysulfide electrolyte. Bolts Jeffrey M. (1977) J. Am. Chem. Soc..An efficient photocathode for semiconductor liquid junction cells: 9.4% solar conversion efficiency with p-InP/VCl3-VCl2-HCl/C. Heller A. (1980) J. Am. Chem. Soc..A comparison of the interface energetics for n-type cadmium sulfide/- and cadmium telluride/nonaqueous electrolyte junctions. Aruchamy A. (1980) J. Phys. Chem..X-ray photoelectron spectroscopic studies of interfacial chemistry at n-type silicon/liquid junctions. Tufts Bruce J. (1992) J. Phys. Chem..n-Type Si-Based Photoelectrochemical Cell: New Liquid Junction Photocell Using a Nonaqueous Ferricenium/Ferrocene Electrolyte. Legg K. D. (1977) Proceedings of the National Academy of Sciences.Photoelectrolysis of water: Si in salt water. Candea Rodica M. (1976) J. Appl. Phys..Semiconductor electrodes. 13. Characterization and behavior of n-type zinc oxide, cadmium sulfide, and gallium phosphide electrodes in acetonitrile solutions. Kohl P. A. (1977) J. Am. Chem. Soc..Characterization of n-Type Semiconducting Indium Phosphide Photoelectrodes. Ellis Arthur B. (1977) J. Electrochem. Soc..Photoelectrochemistry: Applications to Solar Energy Conversion. Nozik A J (1978) Annu. Rev. Phys. Chem..Optical to electrical energy conversion. Characterization of cadmium sulfide and cadmium selenide based photoelectrochemical cells. Ellis Arthur B. (1976) J. Am. Chem. Soc..Flat-band potential of n-type semiconducting molybdenum disulfide by cyclic voltammetry of two-electron reductants: interface energetics and the sustained photooxidation of chloride. Schneemeyer Lynn F. (1979) J. Am. Chem. Soc..Electrochemical characterization of p-type semiconducting tungsten disulfide photocathodes: efficient photoreduction processes at semiconductor/liquid electrolyte interfaces. Baglio Joseph A. (1983) J. Am. Chem. Soc..Semiconductor Electrodes. Nagasubramanian G. (1982) J. Electrochem. Soc..Reduction of GaAs surface recombination velocity by chemical treatment. Nelson R. J. (1980) Appl. Phys. Lett..S/Se Substitution in Polycrystalline CdSe Photoelectrodes. Cahen David (1978) J. Electrochem. Soc..Study of n-type semiconducting cadmium chalcogenide-based photoelectrochemical cells employing polychalcogenide electrolytes. Ellis Arthur B. (1977) J. Am. Chem. Soc..Fermi Golden Rule Approach to Evaluating Outer-Sphere Electron-Transfer Rate Constants at Semiconductor/Liquid Interfaces. Royea William J. (1997) J. Phys. Chem. B.Transparent metals preparation and characterization of light-transmitting platinum films. Heller A. (1985) J. Phys. Chem..Conversion of sunlight into electrical power and photoassisted electrolysis of water in photoelectrochemical cells. Heller Adam (1981) Acc. Chem. Res..Systematic studies of the semiconductor/liquid junction: n-gallium arsenide phosphide anodes in aqueous selenide (Se2-/Se22-) solutions. Gronet Chris M. (1984) J. Phys. Chem..Characterization of the Interface Energetics for N-Type Cadmium Selenide/Nonaqueous Electrolyte Junctions. Aruchamy A. (1983) J. Electrochem. Soc..n-Type Silicon Photoelectrochemistry in Methanol: Design of a 10.1% Efficient Semiconductor/Liquid Junction Solar Cell. Gronet C. M. (1983) Proceedings of the National Academy of Sciences.August 31, 2009Login or register to post comments
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2 of 2 high level injection papers for 8/31/09
Behavior of Si Photoelectrodes under High Level Injection Conditions. 2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels under Illumination and Applied Bias. Krüger Olaf (1997) J. Phys. Chem. B. - Login or register to post comments
1 of 2 high level injection papers for 8/31/09
Behavior of Si Photoelectrodes under High Level Injection Conditions. 1. Steady-State Current−Voltage Properties and Quasi-Fermi Level Positions under Illumination. Tan Ming X. (1997) J. Phys. Chem. B. - created the LEAF journal club.August 26, 2009
- joined JournalFire!August 26, 2009