Wet Chemical Functionalization of III−V Semiconductor Surfaces: Alkylation of Gallium Phosphide Using a Grignard Reaction Sequence | JournalFire

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Wet Chemical Functionalization of III−V Semiconductor Surfaces: Alkylation of Gallium Phosphide Using a Grignard Reaction Sequence

Mukherjee Jhindan, Peczonczyk Sabrina, Maldonado Stephen

Langmuir. 2010 Jul 6; 26(13): 10890-10896.

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Leslie E. O'Leary (Caltech) is following 2 new articles in GaP: surface chem

Wet Chemical Functionalization of III−V Semiconductor Surfaces: Alkylation of Gallium Phosphide Using a Grignard Reaction Sequence. Mukherjee Jhindan (2010) Langmuir.
Physicochemical and Electrochemical Properties of Etched GaP(111)A and GaP(111)B Surfaces. Mukherjee Jhindan (2010) J. Electrochem. Soc..

March 19, 2011
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